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Marcelot Olivier, Salih Alj Antoine, Goiffon Vincent, Estribeau Magali, Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging, MDPI Sensors

Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

Jouni Ali, Malherbe Victor, Mamdy Bastien, Thery Thomas, Sicre Mathieu, Soussan Dimitri, Lorquet Vincent, De Paoli Serge, Belloir Jean-Marc, Lalucaa Valerian, Virmontois Cédric, Gasiot Gilles, Goiffon Vincent, Study of Proton-Induced Defects in 40-nm CMOS SPADs. 2023, IEEE Transactions on Nuclear Science. 70 (8). 1680 - 1686. ISSN 0018-9499

Study of Proton-Induced Defects in 40-nm CMOS SPADs

Paillet Philippe, Girard Sylvain, Goiffon Vincent, Duhamel Olivier, Morana Adriana, Lambert Damien, De Michele Vincenzo, Campanella Cosimo, Melin Gilles, Robin Thierry, Vidalot Jeoffray, Meyer Arnaud, Boukenter Aziz, Ouerdane Youcef, Marin Emmanuel, Glebov Vladimir Yu, Pien Gregory, Phosphosilicate Multimode Optical Fiber for Sensing and Diagnostics at Inertial Confinement Fusion Facilities. 2022, IEEE Sensors Journal. 22 (23). 22700-22706. ISSN 1530-437X

Phosphosilicate Multimode Optical Fiber for Sensing and Diagnostics at Inertial Confinement Fusion Facilities

Cobo Elie, Massenot Sébastien, Le Roch Alexandre, Corbière Franck, Goiffon Vincent, Magnan Pierre, Pelouard Jean-Luc, Design of a CMOS image sensor pixel with embedded polysilicon nano-grating for near-infrared imaging enhancement. 2022, Applied Optics. 61 (4). 960-968. ISSN 1559-128X

Design of a CMOS image sensor pixel with embedded polysilicon nano-grating for near-infrared imaging enhancement

Lucas Sylvain, Oberlin Thomas, Goiffon Vincent, Le Mer Fanny, Automatic Detection and Correction of Random Telegraph Signal Artifacts in Earth Observation Images. 2022, IEEE Geoscience and Remote Sensing Letters. 19. 1-5. ISSN 1545-598X

Automatic Detection and Correction of Random Telegraph Signal Artifacts in Earth Observation Images

Goiffon Vincent, Hardening Techniques for Image Sensors. 2021

Hardening Techniques for Image Sensors

Goiffon Vincent, Tutorial on Radiation Effects on CMOS Image Sensors. 2021

Tutorial on Radiation Effects on CMOS Image Sensors

Jay Antoine, Hémeryck Anne, Cristiano Fuccio, Rideau Denis, Julliard Pierre-Louis, Goiffon Vincent, Le Roch Alexandre, Martin-Samos Layla, Gironcoli Stefano De, Richard Nicolas, Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices : a DFT based Study : 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2021, 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021-09-27 - 2021-09-29 (2021-09-29, Dallas)

Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study : 2021 International Conference on Simulation

Goiffon Vincent, Experimental Study of Semiconductor Irradiation Defects by the Use of Image Sensors. 2020

Experimental Study of Semiconductor Irradiation Defects by the Use of Image Sensors

Goiffon Vincent, Estribeau Magali, Marcelot Olivier, Cervantes Paola, Magnan Pierre, Gaillardin Marc, Virmontois Cédric, Martin-Gonthier Philippe, Molina Romain, Corbière Franck, Girard Sylvain, Paillet Philippe, Marcandella Claude, Radiation Effects in Pinned Photodiode CMOS Image Sensors : Pixel Performance Degradation Due to Total Ionizing Dose. 2012, IEEE Transactions on Nuclear Science. 59 (6). 2878-2887. ISSN 0018-9499

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

Goiffon Vincent, Girard Sylvain, Magnan Pierre, Chabane Aziouz, Paillet Philippe, Cervantes Paola, Martin-Gonthier Philippe, Baggio Jacques, Estribeau Magali, Bourgade Jean-Luc, Darbon Stéphane, Rousseau Adrien, Glebov Vladimir Yu, Pien Gregory, Sangster Thomas C., Vulnerability of CMOS image sensors in megajoule class laser harsh environment. 2012, Optics Express. 20 (18). 20028-20042. ISSN 1094-4087

Vulnerability of CMOS image sensors in megajoule class laser harsh environment

Goiffon Vincent, Cervantes Paola, Virmontois Cédric, Corbière Franck, Magnan Pierre, Estribeau Magali, Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes. 2011, IEEE Transaction on Nuclear Sciences (99). ISSN 0018-9499

Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes

Virmontois Cédric, Goiffon Vincent, Corbière Franck, Magnan Pierre, Girard Sylvain, Bardoux Alain, Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors. 2012, IEEE Transactions on Nuclear Science. 59 (6). 2872-2877. ISSN 0018-9499

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors

Martin-Gonthier Philippe, Goiffon Vincent, Magnan Pierre, In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors. 2012, IEEE Transactions on Electron Devices. 59 (6). 1686-1692. ISSN 0018-9383

In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors

Virmontois Cédric, Goiffon Vincent, Magnan Pierre, Girard Sylvain, Saint-Pé Olivier, Petit Sophie, Rolland Guy, Bardoux Alain, Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors. 2012, IEEE Transactions on Nuclear Science. 59 (4). 927-936. ISSN 0018-9499

Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors

Gaillardin Marc, Goiffon Vincent, Girard Sylvain, Martinez Martial, Magnan Pierre, Paillet Philippe, Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology. 2011, IEEE Transactions on Nuclear Science. 58 (p. 6). 2807-2815. ISSN 0018-9499

Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology

Goiffon Vincent, Magnan Pierre, Martin-Gonthier Philippe, Virmontois Cédric, Gaillardin Marc, Evidence of a novel source of random telegraph signal in CMOS image sensors. 2011, IEEE Electron Device Letters. 32 (6). 773-775. ISSN 0741-3106

Evidence of a novel source of random telegraph signal in CMOS image sensors

Goiffon Vincent, Hopkinson Gordon R., Magnan Pierre, Bernard Frédéric, Rolland Guy, Saint-Pé Olivier, Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology. 2009, IEEE Transactions on Nuclear Science. 5 (4). 2132-2141. ISSN 0018-9499

Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology

Goiffon Vincent, Magnan Pierre, Saint-Pé Olivier, Bernard Frédéric, Rolland Guy, Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process. 2009, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 610 (1). 225-229. ISSN 0168-9002

Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process

Hopkinson Gordon R., Goiffon Vincent, Mohammadzadeh Ali, Random telegraph signals in proton irradiated CCDs and APS. 2008, IEEE Transactions on Nuclear Science (4). 2197-2204. ISSN 0018-9499

Random telegraph signals in proton irradiated CCDs and APS

Goiffon Vincent, Magnan Pierre, Saint-Pé Olivier, Bernard Frédéric, Rolland Guy, Total dose evaluation of deep submicron CMOS imaging technology through elementary device and pixel array behavior analysis. 2008, IEEE Transactions on Nuclear Science. 5 (6). 3494-3501. ISSN 0018-9499

Total dose evaluation of deep submicron CMOS imaging technology through elementary device and pixel array behavior analysis

Virmontois Cédric, Goiffon Vincent, Magnan Pierre, Saint-Pé Olivier, Girard Sylvain, Petit Sophie, Rolland Guy, Bardoux Alain, Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors. 2011, IEEE Transactions on Nuclear Science. 58 (6). 3085-3094. ISSN 0018-9499

Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors

Goiffon Vincent, Virmontois Cédric, Magnan Pierre, Girard Sylvain, Paillet Philippe, Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements. 2010, IEEE Transactions on Nuclear Science. 57 (6). 3087-3094. ISSN 0018-9499

Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements

Virmontois Cédric, Goiffon Vincent, Magnan Pierre, Girard Sylvain, Inguimbert Christophe, Petit Sophie, Rolland Guy, Saint-Pé Olivier, Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology. 2010, IEEE Transactions on Nuclear Science. 57 (6). 3101-3108. ISSN 0018-9499

Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology

Goiffon Vincent, Estribeau Magali, Magnan Pierre, Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology. 2009, IEEE Transactions on Electron Devices. 5 (11). 2594 -2601. ISSN 0018-9383

Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology

Goiffon Vincent, Radiation Effects on CMOS Active Pixel Image Sensors : Ionizing Radiation Effects in Electronics : From Memories to Imagers. 2015« In :» Ionizing Radiation Effects in Electronics : From Memories to Imagers. 978-1-4987-2260-5

Radiation Effects on CMOS Active Pixel Image Sensors : Ionizing Radiation Effects in Electronics: From Memories to Imagers

Le Roch Alexandre, Virmontois Cédric, Paillet Philippe, Belloir Jean-Marc, Rizzolo Serena, Pace Federico, Durnez Clémentine, Goiffon Vincent, Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Floating Diffusions. 2019, 2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2018), 2018-07-16 - 2018-07-20 (2018-07-20, Kona)

Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Floating Diffusions

Dewitte Hugo, Rizzolo Serena, Paillet Philippe, Magnan Pierre, Le Roch Alexandre, Corbière Franck, Molina Romain, Girard Sylvain, Allanche Timothé, Muller Cyprien, Desjonquères Hortense, Macé Jean Reynald, Baudu Jean-Pierre, Saravia Flores A., Goiffon Vincent, Annealing Effects on Radiation Hardened CMOS Image Sensors Exposed to Ultra High Total Ionizing Doses. 2019, Radiation and its Effects on Components and Systems - RADECS 2019, 2019-09-16 - 2019-09-20 (2019-09-20, Montpellier)

Annealing Effects on Radiation Hardened CMOS Image Sensors Exposed to Ultra High Total Ionizing Doses

Goiffon Vincent, Allanche Timothé, Muller Cyprien, Girard Sylvain, Paillet Philippe, Macé Jean Reynald, Osmond Melanie, Burnichon Pierre, Plumeri Stéphane, Baudu Jean-Pierre, Boukenter Aziz, Magnan Pierre, Rizzolo Serena, Corbière Franck, Duhamel Olivier, Rousson johanna, Desjonquères Hortense, Molina Romain, Ouerdane Youcef, Lépine Thierry, CAMRAD : Development of a Multi-Megagray Radiation Hard CMOS Camera for Dismantling Operations. 2018, Dismantling Challenges : Industrial Reality, Prospects and Feedback Experience (DEM 2018), 2018-10-22 - 2018-10-24 (2018-10-24, Avignon)

CAMRAD: Development of a Multi-Megagray Radiation Hard CMOS Camera for Dismantling Operations

Le Roch Alexandre, Virmontois Cédric, Paillet Philippe, Belloir Jean-Marc, Rizzolo Serena, Pace Federico, Durnez Clémentine, Magnan Pierre, Goiffon Vincent, Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Sense Node Floating Diffusions. 2018, IEEE Nuclear and Space Radiation Effects Conference (NSREC 2018), 2018-07-16 - 2018-07-20 (2018-07-20, Kona)

Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Sense Node Floating Diffusions

Rizzolo Serena, Goiffon Vincent, Corbière Franck, Molina Romain, Chabane Aziouz, Girard Sylvain, Paillet Philippe, Magnan Pierre, Boukenter Aziz, Allanche Timothé, Muller Cyprien, Monsanglant-Louvet Celine, Osmond Melanie, Desjonquères Hortense, Macé Jean Reynald, Burnichon Pierre, Baudu Jean-Pierre, Plumeri Stéphane, Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels. 2018, Radiation Effects on Optoelectronic Detectors (CNES Workshop), 2018-11-27

Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Muller Cyprien, Allanche Timothé, Paillet Philippe, Duhamel Olivier, Goiffon Vincent, Rizzolo Serena, Lépine Thierry, Ouerdane Youcef, Boukenter Aziz, Girard Sylvain, Radiation Effects on the Photometric Budget of a MGy Radiation-Hardened Camera. 2018, Radiation Effects on Components and Systems Conference (RADECS), 2018-09-16 - 2018-09-21 (2018-09-21, Gothenburg)

Radiation Effects on the Photometric Budget of a MGy Radiation-Hardened Camera

Raine Mélanie, Jay Antoine, Richard Nicolas, Goiffon Vincent, Girard Sylvain, Gaillardin Marc, Paillet Philippe, Simulation of Single Particle Displacement Damage in Silicon – Part I : Global Approach and Primary Interaction Simulation. 2017, Nuclear and Space Radiation Effects Conference (NSREC), 2016-07-11 - 2016-07-15 (2016-07-15, Portland)

Simulation of Single Particle Displacement Damage in Silicon – Part I: Global Approach and Primary Interaction Simulation

Allanche Timothé, Goiffon Vincent, Rizzolo Serena, Paillet Philippe, Chabane Aziouz, Duhamel Olivier, Muller Cyprien, Magnan Pierre, Clerc Raphael, Marin Emmanuel, Boukenter Aziz, Ouerdane Youcef, Girard Sylvain, Analysis of X-Ray Photo-Charge Induced Speckles in a Radiation Hardened CMOS Image Sensor. 2017, Radiation and Its Effects on Components and Systems (RADECS 2017), 2017-10-02 - 2017-10-06 (2017-10-06, Genève)

Analysis of X-Ray Photo-Charge Induced Speckles in a Radiation Hardened CMOS Image Sensor

Durnez Clémentine, Goiffon Vincent, Rizzolo Serena, Magnan Pierre, Virmontois Cédric, Rubaldo Laurent, Localization of Dark Current Random Telegraph Signal sources in pinned photodiode CMOS Image Sensors : 2017 International Conference on Noise and Fluctuations (ICNF). 2017, 2017 International Conference on Noise and Fluctuations (ICNF), 2017-06-20 - 2017-06-23 (2017-06-23, Vilnius)

Localization of Dark Current Random Telegraph Signal sources in pinned photodiode CMOS Image Sensors : 2017 International Conference on Noise and Fluc

Girard Sylvain, Goiffon Vincent, Paillet Philippe, Van Uffelen Marco, Mont-Casellas Laura, Corbière Franck, Rolando Sébastien, Rizzolo Serena, Magnan Pierre, Duhamel Olivier, Marcandella Claude, Gaillardin Marc, Allanche Timothé, Muller Cyprien, Lépine Thierry, Boukenter Aziz, Ouerdane Youcef, Scott Robin, De Cock Wouter, FURHIS project : Development of MGy Radiation‐Hardened Imaging System for ITER remote handling operations. 2017, International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA 2017), 2017-06-19 - 2017-06-23 (2017-06-23, Lièges)

FURHIS project: Development of MGy Radiation‐Hardened Imaging System for ITER remote handling operations

Goiffon Vincent, Rizzolo Serena, Corbière Franck, Rolando Sébastien, Chabane Aziouz, Sergent Marius, Paillet Philippe, Girard Sylvain, Estribeau Magali, Magnan Pierre, Van Uffelen Marco, Mont-Casellas Laura, Gaillardin Marc, Scott Robin, De Cock Wouter, Challenges in Improving the Performances of Radiation Hard CMOS Image Sensors for Gigarad (Grad) Total Ionizing Dose. 2017, 2017 International Image Sensor Workshop (IISW), 2017-05-30 - 2017-06-02 (2017-06-02, Hiroshima)

Challenges in Improving the Performances of Radiation Hard CMOS Image Sensors for Gigarad (Grad) Total Ionizing Dose

Le Roch Alexandre, Goiffon Vincent, Durnez Clémentine, Magnan Pierre, Virmontois Cédric, Pistre L., Belloir Jean-Marc, Radiation Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Application. 2017, RADECS 2017 : Radiation and Its Effects on Components and Systems, 2017-10-02 - 2017-10-06 (2017-10-06, Geneva)

Radiation Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Application

Le Roch Alexandre, Goiffon Vincent, Durnez Clémentine, Magnan Pierre, Virmontois Cédric, Pistre L., Belloir Jean-Marc, Radiation-Induced Defects in a Commercial Image Sensor for Space Applications. 2017, CNES Workshop : CMOS Image Sensors for High Performance Applications, 2017-11-21 - 2017-11-22 (2017-11-22, Toulouse)

Radiation-Induced Defects in a Commercial Image Sensor for Space Applications

Goiffon Vincent, Estribeau Magali, Michelot Julien, Cervantes Paola, Pelamatti Alice, Marcelot Olivier, Magnan Pierre, Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors. 2014, IEEE Journal of the Electron Devices Society. 2 (4). 65-76. ISSN 2168-6734

Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors

Marcelot Olivier, Estribeau Magali, Goiffon Vincent, Martin-Gonthier Philippe, Corbière Franck, Molina Romain, Rolando Sébastien, Magnan Pierre, Study of CCD Transport on CMOS Imaging Technology : Comparison Between SCCD and BCCD, and Ramp Effect on the CTI. 2014, IEEE Transactions on Electron Devices. 61 (3). 844-849. ISSN 0018-9383

Study of CCD Transport on CMOS Imaging Technology: Comparison Between SCCD and BCCD, and Ramp Effect on the CTI

Goiffon Vincent, Estribeau Magali, Cervantes Paola, Molina Romain, Gaillardin Marc, Magnan Pierre, Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors. 2014, IEEE Transactions on Nuclear Science. 61 (6). 3290-3301. ISSN 0018-9499

Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors

Virmontois Cédric, Toulemont Arthur, Rolland Guy, Materne Alex, Lalucaa Valerian, Goiffon Vincent, Codreanu Catalin, Durnez Clémentine, Bardoux Alain, Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors. 2014, IEEE Transactions on Nuclear Science. 61 (6). 3331-3340. ISSN 0018-9499

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Lalucaa Valerian, Goiffon Vincent, Magnan Pierre, Virmontois Cédric, Rolland Guy, Petit Sophie, Single Event Effects in 4T Pinned Photodiode Image Sensors. 2013, IEEE Transactions on Nuclear Science. 60 (6). 4314 -4322. ISSN 0018-9499

Single Event Effects in 4T Pinned Photodiode Image Sensors

Raine Mélanie, Goiffon Vincent, Paillet Philippe, Duhamel Olivier, Girard Sylvain, Gaillardin Marc, Virmontois Cédric, Belloir Jean-Marc, Richard Nicolas, Magnan Pierre, Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon. 2014, IEEE Transactions on Nuclear Science. ISSN 0018-9499

Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon

Raine Mélanie, Goiffon Vincent, Girard Sylvain, Rousseau Adrien, Gaillardin Marc, Paillet Philippe, Duhamel Olivier, Virmontois Cédric, Modeling Approach for the Prediction of Transient and Permanent Degradations of Image Sensors in Complex Radiation Environments. 2013, IEEE Transactions on Nuclear Science. 60 (6). 4297-4304. ISSN 0018-9499

Modeling Approach for the Prediction of Transient and Permanent Degradations of Image Sensors in Complex Radiation Environments

Virmontois Cédric, Goiffon Vincent, Robbins Mark S., Tauziède Laurie, Geoffray Hervé, Raine Mélanie, Girard Sylvain, Gilard Olivier, Magnan Pierre, Bardoux Alain, Dark Current Random Telegraph Signals in Solid-State Image Sensors. 2013, IEEE Transactions on Nuclear Science. 60 (6). 4323-4331. ISSN 0018-9499

Dark Current Random Telegraph Signals in Solid-State Image Sensors

Pelamatti Alice, Goiffon Vincent, Estribeau Magali, Cervantes Paola, Magnan Pierre, Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors. 2013, IEEE Electron Device Letters. 34 (7). 900-902. ISSN 0741-3106

Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

Gaillardin Marc, Goiffon Vincent, Magnan Pierre, High total ionizing dose and temperature effects on micro- and nano-electronic devices : 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications (ANIMMA). 2013, Proceedings of Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA), 2013 3rd International Conference on. 1-6

High total ionizing dose and temperature effects on micro- and nano-electronic devices : 2013 3rd International Conference on Advancements in Nuclear

Lalucaa Valerian, Goiffon Vincent, Magnan Pierre, Rolland Guy, Petit Sophie, Single Event Effects in CMOS Image Sensors. 2013, IEEE Transactions on Nuclear Science. 60 (4). 2494-2502. ISSN 0018-9499

Single Event Effects in CMOS Image Sensors