L’excellence passionnément
Main Objective
Increasing the knowledge of the defects creation processes and dynamics in semiconductor devices as well as their associated effects on devices performance.
The use of Radiations
Ionizing and non-ionizing radiations amplify the expression of pre-existing defects in semiconductor devices allowing in-depth characterization of their impacts on global performances.
The use of Image Sensors
The image sensor’s pixel array can be seen as a matrix of similar radiation-sensitive elements allowing a statistical approach to explore the radiation-induced degradations. Performance degradation histograms over the array are related to specific probability density functions allowing parametric studies of the defects’ creation.