PhDs Supervision

 Radiation effects on single photon detection image sensors SPAD, QIS, SiPM

Ongoing
2023 - 2026

Main Objective :

Explore radiation effects and their associated performance degradations on single photon detection image sensors such as Single Photon Avalanche Diode (SPAD) arrays, Quanta Image Sensors (QISs), and Silicon PhotoMultipliers (SiPMs) to evaluate their vulnerabilities in space environments.

Funding and Supervision Institus :

• ISAE-SUPAERO
• Centre National d’Etudes Spatiales (CNES)

Main Contributions and Conclusions :

• Comparative study covering every aspect of single photon detection devices including Quanta Image Sensors (QISs).

 Developement of Quanta Image Sensor (QIS)

Ongoing
2023 - 2026

Main Objective :

Explore Quanta Image Sensor (QIS) designs and CIS technologies’ impacts on single photon detection performances.

Funding and Supervision Institus :

• ISAE-SUPAERO
• Centre National d’Etudes Spatiales (CNES)
• Thalès Aliena Space (TAS)
• Pyxalis

Main Contributions and Conclusions :

• Design and testing of QIS test structures.

 Radiation effects on commercial image sensors for space applications

Ongoing
2021 - 2024

Main Objective :

Explore radiation effects and their associated performance degradations on commercial CMOS Image Sensors (CISs) to evaluate their vulnerabilities in space environments.

Funding and Supervision Institus :

• ISAE-SUPAERO
• Centre National d’Etudes Spatiales (CNES)
• NASA - Goddard Space Flight Center (GSFC)

Main Contributions and Conclusions :

• Test and analysis on state-of-the-art sub-millimeter pixel pitch CISs have revealed similar degradation mechanisms and defect characteristics to the ones observed in past generations of CIS.
• Most advanced imaging technology nodes hint at promising results making them prominent candidates for space engineering cameras.

Scientific Contributions :

• A. Antonsanti, C. Virmontois, J.-M. Lauenstein, A. Le Roch, and V. Goiffon, "Probing Displacement Damage Induced Dark Current in a Small Pitch Vertically Pinned Photodiodes CMOS Image Sensor after Proton Irradiation," in IEEE Transactions on Nuclear Science, vol. 69, no. 7, pp. 1506 - 1514, July. 2022.
  doi : 10.1109/TNS.2022.3160056
  https://ieeexplore.ieee.org/document/9737285

• A. Antonsanti, Vincent Goiffon, François Roy, Alexandre Le Roch, Landen D. Ryder, Victor Malherbe, Philippe Roche, Olivier Nier, Cédric Virmontois, Jean-Marie Lauenstein, "Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition," in IEEE Transactions on Nuclear Science, vol. 70, no. 8, pp. 1958 - 1965, Aug. 2023.
  doi : 10.1109/TNS.2023.3262769
  https://ieeexplore.ieee.org/document/10091949

  Ultra-high dose effects and junction leakage current in CMOS technologies for analog applications

2018 - 2022

Main Objective :

Explore radiation effects and their associated performance degradations on CMOS transistors to evaluate their behaviors in ultra-high ionizing dose environments such as nuclear applications including fusion and fission reactors.

Funding and Supervision Institus :

• ISAE-SUPAERO
• Commissariat à l’énergie atomique et aux énergies alternatives (CEA)

Main Contributions and Conclusions :

• High ionizing dose tests and analysis on CMOS transistors have pushed further the understanding of radiation-induced degradations in the range of the Mega Gray and have revealed fast annealing behaviors.
• Specific designs such as Enclose Layout Transistors (ELT) and specific CMOS fabrication processes have shown good radiation tolerance for analog applications.

Scientific Contributions :

• Manuscript : Ultra-high dose effects and junction leakage current in CMOS technologies for analog applications
  https://www.theses.fr/2022ESAE0011

• H. Dewitte, S. Rizzolo, P. Paillet, P. Magnan, A. Le Roch, F. Corbiere, R. Molina, A. Chabane, S. Girard, A. Boukenter, T. Allanche, M. Cyprien, C. Monsanglant-Louvet, M. Osmond, H. Desjonqueres, J.-R Mace, P. Burnichon, J.-P Baudu, F. Saravia, S. Catherin, V. Goiffon, "Annealing Effects on Radiation Hardened CMOS Image Sensors Exposed to Ultra High Total Ionizing Doses," in IEEE Transactions on Nuclear Science, vol. 67, no. 7, pp. 1284 - 1292, Jul. 2020.
  doi : 10.1109/TNS.2020.3001618
  https://ieeexplore.ieee.org/document/9115076

• H. Dewitte, P. Paillet, S. Rizzolo, A. Le Roch, C. Marcandella, V. Goiffon, "Ultra-High Total Ionizing Dose Effects on MOSFETs for Analog Applications," in IEEE Transactions on Nuclear Science, vol. 68, no. 5, pp. 697 - 706, May. 2021.
  doi : 10.1109/TNS.2021.3065842
  https://ieeexplore.ieee.org/document/9376965

• H. Dewitte, V. Goiffon, A. Le Roch, S. Rizzolo, C. Virmontois, C. Marcandella, P. Paillet, "Radiation-Induced Junction Leakage Random Telegraph Signal," in IEEE Transactions on Nuclear Science, vol. 69, no. 3, pp. 290 - 298, Mar. 2022.
  doi : 10.1109/TNS.2021.3119456
  https://ieeexplore.ieee.org/document/9567687

• H. Dewitte, V. Goiffon, A. Le Roch, S. Rizzolo, A. Jay, M. Jech, A. Hemeryck, P. Paillet, "Junction Leakage Random Telegraph Signals in Arrays of MOSFETs," in IEEE Electron Device Letter, vol. 42, no. 11, pp. 1650 - 1653, Sep. 2021.
  doi : 10.1109/LED.2021.3112296
  https://ieeexplore.ieee.org/document/9536654

• H. Dewitte, P. Paillet, A. Le Roch, S. Rizzolo, C. Marcandella, and V. Goiffon, "Hours-long Transient Leakage Current in MOS Structures Induced by High Total-Ionizing-Dose," in IEEE Transactions on Nuclear Science, vol. 69, no. 7, pp. 1428 - 1436, July. 2022.
  doi : 10.1109/TNS.2022.3150407
  https://ieeexplore.ieee.org/document/9709289