Official Job Title :
Professor, Head of Integrated Image Sensor Research Group
Biography :
Vincent Goiffon grew up in the south west of France, and received the “Diplôme d’Ingénieur Supaero” in Aerospace Engineering from ISAE-SUPAERO and the Research Master of Electrical Engineering (EE) from the University of Toulouse, both in 2005. He received his Ph.D. in EE from the same University in 2008. The same year he joined the ISAE-SUPAERO Image Sensor Research group as Associate Professor. He obtained the “Habilitation à Diriger les Recherches” (Habilitation to Direct Research, HDR) in 2017 and has been a Full Professor in the Electrical Engineering Department of the Institute since 2018. In September 2021, he took over the responsibility of the Research Group.
He has contributed to advancing the understanding of radiation effects on solid-state image sensors, notably by identifying original degradation mechanisms in pinned photodiode pixels and clarifying the role of interface and bulk defects in the mysterious dark current random telegraph signal phenomenon.
Besides his contributions to various space R&D projects, Vincent has been leading the development of radiation-hardened CMOS image sensors (CIS) and cameras for nuclear fusion experiments (e.g., ITER and CEA Laser MegaJoule) and nuclear power plant safety.
He has been an associate editor of the IEEE Transactions on Nuclear Science since 2017 and has served the community as a reviewer and session chair.
- https://orcid.org/0000-0001-5024-0115
- http://www.researcherid.com/rid/V-1369-2017
- https://www.linkedin.com/in/vincentgoiffon/
- https://www.researchgate.net/profile/Vincent-Goiffon
Research :
Vincent Goiffon is the author of one book chapter and more than 100 publications in the following fields of research (subpages with for more info and useful tools under construction) :
- Radiation Effects on Solid State Image Sensors (Total Ionizing Dose effects, Displacement Damage and Single Event Effects)
- CMOS Image Sensors Physics and Design
- Leakage and Dark Current Mechanisms in Semiconductor Devices
- Random Telegraph Signal (RTS) phenomena in PN junctions, photodetectors, MOS transistors, CMOS integrated circuits and pixel arrays
- Manufacturing process and radiation induced semiconducteur defects characterization and simulation
PhD Advising :
Under construction
Invited Presentations :
- 2023 Days of Detection, “Space and Nuclear Radiation Effects on CMOS Image Sensors”, University of Padova/INFN, Padova, Italia
- 2023 LLNL National Ignition Facility Seminar on radiation effects on electronics, “Radiation Effects on
- CMOS Image Sensors”, Livermore, CA, USA
- 2023 Freiburg Infrared Colloquium, “Radiation Effects on Solid-State Image Sensors : From Silicon to Infrared Detectors”, Freiburg, Germany
- 2022 CEA Leti Seminar, “Radiation Effects on CMOS Image Sensors”, Grenoble, France
- 2022 Harvest Imaging Forum, “Radiation Induced Defects and Random Telegraph Signal Noises in CMOS Image Sensors”, 6h course, Delft, the Netherlands
- 2021 IEEE NSREC Short Course, “Hardening Techniques for Image Sensors”
- 2021 Workshop on Radiation Effects on Optoelectronics and Photonics Technologies, “Radiation Effects in CMOS Image Sensors : an Overview”, Saint-Etienne, France
- 2020 Theory days on Multiscale Approaches applied to Irradiation Processes, “Experimental study of semiconductor irradiation defects by the use of image sensors
- 2020 Workshop on Radiation Tolerant electronics for ITER, “CMOS-Sensor-Based Radiation Tolerant Cameras”
- 2019 NASA Goddard Space Flight Center Seminar, “High Total Ionizing Dose Effects and Radiation
- Hardening of CMOS Image Sensors”, Greenbelt, MD
- 2019 VIII International Course on Detectors and Electronics for High Energy Physics, Astrophysics, Space and Medical Applications, “Radiation Effects on CMOS Image Sensors”, Legnaro, Italie
- 2018 NASA Jet Propulsion Laboratory (JPL) seminar, “High Total Ionizing Dose Effects and Radiation Hardening of CMOS Image Sensors”, Pasadena, CA
- 2018 CERN RADSAGA Summer School, “CMOS Image Sensors : Technology Overview and Total Ionizing Dose Effects”, Saint Etienne, France
- 2017 CERN Radiation Working Group Seminar, “Radiation hardened CMOS Image Sensors Development”, Geneva, Switzerland
- 2016 Topical Workshop on Electronics for Particle Physics (TWEPP) “CMOS Image Sensors in Harsh Radiation Environments”, Karlsruhe Institute of Technology, Germany
Conference/Editorial Responsibilities :
- Associate Editor of the IEEE Transactions on Nuclear Science since December 2017
- Session Chair : RADECS 2012, 2013, 2015 and 2017 ; IEEE NSREC 2013 and 2019 ; IEEE Eurocon 2023
- Award Committee Member : RADECS 2011 and IEEE NSREC 2012
- 2024 IEEE NSREC Committee : Short Course Chair
- Founder of the ISAE-SUPAERO IEEE Student Branch and associated NPSS Student Branch Chapter
Distinctions and Awards :
- 2022 RADECS Best Student Paper Award (PhD student : A. Antonsanti)
- 2019 IEEE Nuclear and Space Radiation Effects Conference (NSREC) Meritorious Paper Award
- 2019 RADECS Best Paper Award (PhD student : A. Le Roch)
- 2019 RADECS Best Student Paper Award (PhD student : A. Le Roch)
- 2019 International Image Sensor Workshop (IISW) 2nd Best Poster Award (PhD student : A. Le Roch)
- 2017 IEEE NSREC Outstanding Student Paper Award (PhD student : C. Durnez)
- 2016 IEEE NSREC Outstanding Student Paper Award (PhD student : J.M. Belloir)
- 2015 RADECS Best Student Paper Award (PhD student : J.M. Belloir)
- 2013 International Image Sensor Workshop (IISW) 2nd Best Poster Award
- 2012 IEEE NSREC Outstanding Conference Paper Award
- 2011 IEEE NSREC Outstanding Student Paper Award (PhD student : C. Virmontois)