Flux publications Open Science

Jouni Ali, Malherbe Victor, Mamdy Bastien, Thery Thomas, Sicre Mathieu, Soussan Dimitri, Lorquet Vincent, De Paoli Serge, Belloir Jean-Marc, Lalucaa Valerian, Virmontois Cédric, Gasiot Gilles, Goiffon Vincent, Study of Proton-Induced Defects in 40-nm CMOS SPADs. 2023, IEEE Transactions on Nuclear Science. 70 (8). 1680 - 1686. ISSN 0018-9499

Study of Proton-Induced Defects in 40-nm CMOS SPADs

Durnez Clémentine, Virmontois Cédric, Panuel, Pierre, Antonsanti, Aubin, Goiffon Vincent, Estribeau Magali, Saint-Pé Olivier, Lalucaa Valerian, Berdin, Erick, Larnaudie Franck, Belloir Jean-Marc, Codreanu Catalin, Chavanne, Ludovic, Evaluation of Microlenses, Color Filters, and Polarizing Filters in CIS for Space Applications. 2023, Sensors. 23 (13). ISSN 1424-8220

Evaluation of Microlenses, Color Filters, and Polarizing Filters in CIS for Space Applications

Antonsanti, Aubin, Goiffon Vincent, Roy François, Le Roch Alexandre, Ryder, Landen, Malherbe Victor, Roche, Philippe, Nier, Olivier, Virmontois Cédric, Lauenstein, Jean-Marie, Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition. 2023, IEEE Transactions on Nuclear Science. 70 (8). 1958 - 1965. ISSN 0018-9499

Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition

Marcelot Olivier, Salih Alj Antoine, Goiffon Vincent, Estribeau Magali, Morvan, Marjorie, Demiguel, Stéphane, Virmontois Cédric, Rouvie Anne, Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging. 2023, Sensors. 23 (9518). ISSN 1424-8220

Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

Salih Alj Antoine, Touron Pierre, Roy François, Demiguel, Stéphane, Michelot Julien, Virmontois Cédric, Magnan Pierre, Goiffon Vincent, Capacitive Deep Trench Isolation-Based CCD-on-CMOS Image Sensor Sensitivity to Total Ionizing Dose. 2023, IEEE transaction on Nuclear Science. 70 (8). 2018-2026. ISSN 0018-9499

Capacitive Deep Trench Isolation-Based CCD-on-CMOS Image Sensor Sensitivity to Total Ionizing Dose

Benfante, Marco, Reverchon, Jean-Luc, Gilard Olivier, Demiguel, Stéphane, Virmontois Cédric, Durnez Clémentine, Dartois, Thierry, Goiffon Vincent, Electric Field Enhanced Generation Current in Proton Irradiated InGaAs Photodiodes. 2023, IEEE Transactions on Nuclear Science. 70 (4). 523-531. ISSN 0018-9499

Electric Field Enhanced Generation Current in Proton Irradiated InGaAs Photodiodes

Jouni Ali, Sicre Mathieu, Malherbe Victor, Mamdy Bastien, Thery Thomas, Belloir Jean-Marc, Soussan Dimitri, De Paoli Serge, Lorquet Vincent, Lalucaa Valerian, Virmontois Cédric, Gasiot Gilles, Goiffon Vincent, Proton-Induced Displacement Damages in 2-D and Stacked CMOS SPADs : Study of Dark Count Rate Degradation. 2023, Transactions on Nuclear Science. 70 (4). 515-522. ISSN 0018-9499

Proton-Induced Displacement Damages in 2-D and Stacked CMOS SPADs: Study of Dark Count Rate Degradation

Salih Alj Antoine, Morvan, Marjorie, Touron Pierre, Roy François, Demiguel, Stéphane, Virmontois Cédric, Lalucaa Valerian, Michelot Julien, Magnan Pierre, Goiffon Vincent, In Depth Characterization and Radiation Testing of a High Performance Fully Passivated Charge Domain CDTI based CCD-on-CMOS Image Sensor. 2023, IISW23 International Image Sensor Workshop 2023, 2023-05-25 - 2023-05-22 (2023-05-22, Crieff)

In Depth Characterization and Radiation Testing of a High Performance Fully Passivated Charge Domain CDTI based CCD-on-CMOS Image Sensor

Antonsanti, Aubin, Lauenstein, Jean-Marie, Le Roch Alexandre, Ryder, Landen, Virmontois Cédric, Goiffon Vincent, Exploring Space-Radiation Induced Dark Signal and Random-Telegraph-Signal in a Sony IMX219 CMOS Image-Sensor : Proceedings of the International Image Sensor Workshop 2023, Crieff, Scotland. 2023, IISW23 International Image Sensor Workshop 2023, 2023-05-25 - 2023-05-22 (2023-05-22, Crieff)

Exploring Space-Radiation Induced Dark Signal and Random-Telegraph-Signal in a Sony IMX219 CMOS Image-Sensor : Proceedings of the International Image

Fassi Nour, Carrere Jean-Pierre, Magnan Pierre, Estribeau Magali, Goiffon Vincent, Quantum Efficiency of backside-illuminated pixels under ultraviolet illumination : ARC coatings impact measurements and simulations : Electronic Imaging, 35. 2023, Electronic Imaging Symposium 2023, 2023-01-19 - 2023-01-15 (2023-01-15, San Francisco)

Quantum Efficiency of backside-illuminated pixels under ultraviolet illumination: ARC coatings impact measurements and simulations : Electronic Imagin

Fassi Nour, Carrere Jean-Pierre, Leon Perez Edgar, Estribeau Magali, Magnan Pierre, Goiffon Vincent, Analysis of Backside Illuminated CMOS pixels’ Quantum Efficiency under Ultraviolet Illumination. 2023, IISW23 International Image Sensor Workshop 2023, 2023-05-25 - 2023-05-22 (2023-05-22, Crieff)

Analysis of Backside Illuminated CMOS pixels’ Quantum Efficiency under Ultraviolet Illumination

Paillet Philippe, Girard Sylvain, Goiffon Vincent, Duhamel Olivier, Morana Adriana, Lambert Damien, De Michele Vincenzo, Campanella Cosimo, Melin Gilles, Robin Thierry, Vidalot Jeoffray, Meyer Arnaud, Boukenter Aziz, Ouerdane Youcef, Marin Emmanuel, Glebov Vladimir Yu, Pien Gregory, Phosphosilicate Multimode Optical Fiber for Sensing and Diagnostics at Inertial Confinement Fusion Facilities. 2022, IEEE Sensors Journal. 22 (23). 22700-22706. ISSN 1530-437X

Phosphosilicate Multimode Optical Fiber for Sensing and Diagnostics at Inertial Confinement Fusion Facilities

Cobo Elie, Massenot Sébastien, Le Roch Alexandre, Corbière Franck, Goiffon Vincent, Magnan Pierre, Pelouard Jean-Luc, Design of a CMOS image sensor pixel with embedded polysilicon nano-grating for near-infrared imaging enhancement. 2022, Applied Optics. 61 (4). 960-968. ISSN 1559-128X

Design of a CMOS image sensor pixel with embedded polysilicon nano-grating for near-infrared imaging enhancement

Lucas Sylvain, Oberlin Thomas, Goiffon Vincent, Le Mer Fanny, Automatic Detection and Correction of Random Telegraph Signal Artifacts in Earth Observation Images. 2022, IEEE Geoscience and Remote Sensing Letters. 19. 1-5. ISSN 1545-598X

Automatic Detection and Correction of Random Telegraph Signal Artifacts in Earth Observation Images

Antonsanti, Aubin, Virmontois Cédric, Lauenstein, Jean-Marie, Le Roch Alexandre, Dewitte Hugo, Goiffon Vincent, Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor after Proton Irradiation. 2022, IEEE Transactions on Nuclear Science. 69 (7). 1506 - 1514. ISSN 0018-9499

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor after Proton Irradiation

Goiffon Vincent, Hardening Techniques for Image Sensors. 2021

Hardening Techniques for Image Sensors

Goiffon Vincent, Tutorial on Radiation Effects on CMOS Image Sensors. 2021

Tutorial on Radiation Effects on CMOS Image Sensors

Jay Antoine, Hémeryck Anne, Cristiano Fuccio, Rideau Denis, Julliard Pierre-Louis, Goiffon Vincent, Le Roch Alexandre, Martin-Samos Layla, Gironcoli Stefano De, Richard Nicolas, Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices : a DFT based Study : 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 2021, 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021-09-27 - 2021-09-29 (2021-09-29, Dallas)

Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study : 2021 International Conference on Simulation

Le Roch Alexandre, Virmontois Cédric, Paillet Philippe, Belloir Jean-Marc, Rizzolo Serena, Marcelot Olivier, Dewitte Hugo, Van Uffelen Marco, Mont-Casellas Laura, Magnan Pierre, Goiffon Vincent, Phosphorus Versus Arsenic : Role of the Photodiode Doping Element in CMOS Image Sensor Radiation-Induced Dark Current and Random Telegraph Signal. 2020, IEEE Transactions on Nuclear Science. 67 (7). 1241-1250. ISSN 0018-9499

Phosphorus Versus Arsenic: Role of the Photodiode Doping Element in CMOS Image Sensor Radiation-Induced Dark Current and Random Telegraph Signal

Rizzolo Serena, Le Roch Alexandre, Marcelot Olivier, Corbière Franck, Paillet Philippe, Gaillardin Marc, Magnan Pierre, Goiffon Vincent, High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors. 2020, IEEE Transactions on Nuclear Science. 67 (7). 1256-1262. ISSN 0018-9499

High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors

Dewitte Hugo, Rizzolo Serena, Paillet Philippe, Magnan Pierre, Le Roch Alexandre, Corbière Franck, Molina Romain, Girard Sylvain, Allanche Timothé, Muller Cyprien, Desjonquères Hortense, Macé Jean Reynald, Baudu Jean-Pierre, Flores A. Saravia, Goiffon Vincent, Annealing Effects on Radiation-Hardened CMOS Image Sensors Exposed to Ultrahigh Total Ionizing Doses. 2020, IEEE Transactions on Nuclear Science. 67 (7). 1284-1292. ISSN 0018-9499

Annealing Effects on Radiation-Hardened CMOS Image Sensors Exposed to Ultrahigh Total Ionizing Doses

Goiffon Vincent, Experimental Study of Semiconductor Irradiation Defects by the Use of Image Sensors. 2020

Experimental Study of Semiconductor Irradiation Defects by the Use of Image Sensors

Goiffon Vincent, Bilba Teddy, Deladerriere Theo, Beaugendre Guillaume, Le Roch Alexandre, Dion Arnaud, Virmontois Cédric, Belloir Jean-Marc, Gaillardin Marc, Jay Antoine, Paillet Philippe, Radiation Induced Variable Retention Time in Dynamic Random Access Memories. 2020, IEEE Transactions on Nuclear Science. 67 (1). 1-13. ISSN 0018-9499

Radiation Induced Variable Retention Time in Dynamic Random Access Memories

Le Roch Alexandre, Virmontois Cédric, Paillet Philippe, Warner Jeffrey H., Belloir Jean-Marc, Magnan Pierre, Goiffon Vincent, Comparison of X-Ray and Electron Radiation Effects on Dark Current Non-Uniformity and Fluctuations in CMOS Image Sensors. 2020, IEEE Transactions on Nuclear Science. 67 (1). 268-277. ISSN 0018-9499

Comparison of X-Ray and Electron Radiation Effects on Dark Current Non-Uniformity and Fluctuations in CMOS Image Sensors

Durnez Clémentine, Goiffon Vincent, Virmontois Cédric, Magnan Pierre, Rubaldo Laurent, Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays. 2020, IEEE Transactions on Electron Devices. 67 (11). 4940-4946. ISSN 0018-9383

Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays

Jay Antoine, Huet Christophe, Salles Nicolas, Gunde Miha, Martin-Samos Layla, Richard Nicolas, Landa Georges, Goiffon Vincent, De Gironcoli Stefano, Hémeryck Anne, Mousseau Normand, Finding Reaction Pathways and Transition States : r-ARTn and d-ARTn as an Efficient and Versatile Alternative to String Approaches. 2020, Journal of Chemical Theory and Computation. 16 (10). 6726-6734. ISSN 1549-9618

Finding Reaction Pathways and Transition States: r-ARTn and d-ARTn as an Efficient and Versatile Alternative to String Approaches

Marcelot Olivier, Goiffon Vincent, Magnan Pierre, Exploration of Pinned Photodiode Radiation Hardening Solutions Through TCAD Simulations. 2019, IEEE Transactions on Electron Devices. 66 (8). 3411-3416. ISSN 0018-9383

Exploration of Pinned Photodiode Radiation Hardening Solutions Through TCAD Simulations

Le Roch Alexandre, Virmontois Cédric, Paillet Philippe, Belloir Jean-Marc, Rizzolo Serena, Pace Federico, Durnez Clémentine, Magnan Pierre, Goiffon Vincent, Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Sense Node Floating Diffusions. 2019, IEEE Transactions on Nuclear Science. 66 (3). 616-624. ISSN 0018-9499

Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Sense Node Floating Diffusions

Rizzolo Serena, Goiffon Vincent, Corbière Franck, Molina Romain, Chabane Aziouz, Girard Sylvain, Paillet Philippe, Magnan Pierre, Boukenter Aziz, Allanche Timothé, Muller Cyprien, Monsanglant-Louvet Celine, Osmond Melanie, Desjonquères Hortense, Macé Jean Reynald, Burnichon Pierre, Baudu Jean-Pierre, Plumeri Stéphane, Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels. 2019, IEEE Transactions on Nuclear Science. 66 (1). 111-119. ISSN 0018-9499

Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Le Roch Alexandre, Virmontois Cédric, Paillet Philippe, Belloir Jean-Marc, Rizzolo Serena, Pace Federico, Durnez Clémentine, Goiffon Vincent, Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Floating Diffusions. 2019, 2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2018), 2018-07-16 - 2018-07-20 (2018-07-20, Kona)

Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Floating Diffusions

Dewitte Hugo, Rizzolo Serena, Paillet Philippe, Magnan Pierre, Le Roch Alexandre, Corbière Franck, Molina Romain, Girard Sylvain, Allanche Timothé, Muller Cyprien, Desjonquères Hortense, Macé Jean Reynald, Baudu Jean-Pierre, Saravia Flores A., Goiffon Vincent, Annealing Effects on Radiation Hardened CMOS Image Sensors Exposed to Ultra High Total Ionizing Doses. 2019, Radiation and its Effects on Components and Systems - RADECS 2019, 2019-09-16 - 2019-09-20 (2019-09-20, Montpellier)

Annealing Effects on Radiation Hardened CMOS Image Sensors Exposed to Ultra High Total Ionizing Doses

Le Roch Alexandre, Virmontois Cédric, Goiffon Vincent, Tauziède Laurie, Belloir Jean-Marc, Durnez Clémentine, Magnan Pierre, Radiation-Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Applications. 2018, IEEE Transactions on Nuclear Science. 65 (8). 1645-1653. ISSN 0018-9499

Radiation-Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Applications

Rizzolo Serena, Goiffon Vincent, Estribeau Magali, Marcelot Olivier, Martin-Gonthier Philippe, Magnan Pierre, Influence of Pixel Design on Charge Transfer Performances in CMOS Image Sensors. 2018, IEEE Transactions on Electron Devices. 65 (3). 1048-1055. ISSN 0018-9383

Influence of Pixel Design on Charge Transfer Performances in CMOS Image Sensors

Allanche Timothé, Paillet Philippe, Goiffon Vincent, Muller Cyprien, Van Uffelen Marco, Mont-Casellas Laura, Duhamel Olivier, Marcandella Claude, Rizzolo Serena, Magnan Pierre, Clerc Raphael, Lépine Thierry, Hébert Mathieu, Boukenter Aziz, Ouerdane Youcef, Scott Robin, De Cock Wouter, Girard Sylvain, Vulnerability and Hardening Studies of Optical and Illumination Systems at MGy Dose Levels. 2018, IEEE Transactions on Nuclear Science. 65 (1). 132-140. ISSN 0018-9499

Vulnerability and Hardening Studies of Optical and Illumination Systems at MGy Dose Levels

Durnez Clémentine, Goiffon Vincent, Virmontois Cédric, Rizzolo Serena, Le Roch Alexandre, Magnan Pierre, Paillet Philippe, Marcandella Claude, Rubaldo Laurent, Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors. 2018, IEEE Transactions on Nuclear Science. 65 (1). 92-100. ISSN 0018-9499

Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors

Goiffon Vincent, Rizzolo Serena, Corbière Franck, Rolando Sébastien, Bounasser Said, Sergent Marius, Chabane Aziouz, Marcelot Olivier, Estribeau Magali, Magnan Pierre, Paillet Philippe, Girard Sylvain, Gaillardin Marc, Marcandella Claude, Allanche Timothé, Van Uffelen Marco, Mont-Casellas Laura, Scott Robin, De Cock Wouter, Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling. 2018, IEEE Transactions on Nuclear Science. 65 (1). 101-110. ISSN 0018-9499

Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling

Rizzolo Serena, Goiffon Vincent, Estribeau Magali, Paillet Philippe, Marcandella Claude, Durnez Clémentine, Magnan Pierre, Total-Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors. 2018, IEEE Transactions on Nuclear Science. 65 (1). 84-91. ISSN 0018-9499

Total-Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors

Goiffon Vincent, Allanche Timothé, Muller Cyprien, Girard Sylvain, Paillet Philippe, Macé Jean Reynald, Osmond Melanie, Burnichon Pierre, Plumeri Stéphane, Baudu Jean-Pierre, Boukenter Aziz, Magnan Pierre, Rizzolo Serena, Corbière Franck, Duhamel Olivier, Rousson johanna, Desjonquères Hortense, Molina Romain, Ouerdane Youcef, Lépine Thierry, CAMRAD : Development of a Multi-Megagray Radiation Hard CMOS Camera for Dismantling Operations. 2018, Dismantling Challenges : Industrial Reality, Prospects and Feedback Experience (DEM 2018), 2018-10-22 - 2018-10-24 (2018-10-24, Avignon)

CAMRAD: Development of a Multi-Megagray Radiation Hard CMOS Camera for Dismantling Operations

Le Roch Alexandre, Virmontois Cédric, Paillet Philippe, Belloir Jean-Marc, Rizzolo Serena, Pace Federico, Durnez Clémentine, Magnan Pierre, Goiffon Vincent, Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Sense Node Floating Diffusions. 2018, IEEE Nuclear and Space Radiation Effects Conference (NSREC 2018), 2018-07-16 - 2018-07-20 (2018-07-20, Kona)

Radiation-Induced Leakage Current and Electric Field Enhancement in CMOS Image Sensor Sense Node Floating Diffusions

Muller Cyprien, Allanche Timothé, Paillet Philippe, Duhamel Olivier, Goiffon Vincent, Rizzolo Serena, Lépine Thierry, Ouerdane Youcef, Boukenter Aziz, Girard Sylvain, Radiation Effects on the Photometric Budget of a MGy Radiation-Hardened Camera. 2018, Radiation Effects on Components and Systems Conference (RADECS), 2018-09-16 - 2018-09-21 (2018-09-21, Gothenburg)

Radiation Effects on the Photometric Budget of a MGy Radiation-Hardened Camera

Rizzolo Serena, Goiffon Vincent, Corbière Franck, Molina Romain, Chabane Aziouz, Girard Sylvain, Paillet Philippe, Magnan Pierre, Boukenter Aziz, Allanche Timothé, Muller Cyprien, Monsanglant-Louvet Celine, Osmond Melanie, Desjonquères Hortense, Macé Jean Reynald, Burnichon Pierre, Baudu Jean-Pierre, Plumeri Stéphane, Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels. 2018, Radiation Effects on Optoelectronic Detectors (CNES Workshop), 2018-11-27

Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Belloir Jean-Marc, Lincelles Jean-Baptiste, Pelamatti Alice, Durnez Clémentine, Goiffon Vincent, Virmontois Cédric, Paillet Philippe, Magnan Pierre, Gilard Olivier, Dark Current Blooming in Pinned Photodiode CMOS Image Sensors. 2017, IEEE Transactions on Electron Devices. 64 (3). 11161-1166. ISSN 0018-9383

Dark Current Blooming in Pinned Photodiode CMOS Image Sensors

Marcelot Olivier, Goiffon Vincent, Nallet Franck, Magnan Pierre, Pinned Photodiode CMOS Image Sensor\TCAD Simulation : in-Depth Analysis of in-Pixel Pinning Voltage Measurement for a Diagnostic Tool. 2017, IEEE Transactions on Electron Devices. 64 (2). 455-462. ISSN 0018-9383

Pinned Photodiode CMOS Image Sensor\\TCAD Simulation: in-Depth Analysis of in-Pixel Pinning Voltage Measurement for a Diagnostic Tool

Belloir Jean-Marc, Goiffon Vincent, Raine Mélanie, Virmontois Cédric, Durnez Clémentine, Paillet Philippe, Magnan Pierre, Gilard Olivier, Molina Romain, Dark Current Spectroscopy in neutron, proton and ion irradiated CMOS Image Sensors : from Point Defects to Clusters. 2017, IEEE Transactions on Nuclear Science. 64 (1). 27-37. ISSN 0018-9499

Dark Current Spectroscopy in neutron, proton and ion irradiated CMOS Image Sensors: from Point Defects to Clusters

Durnez Clémentine, Goiffon Vincent, Virmontois Cédric, Belloir Jean-Marc, Magnan Pierre, Rubaldo Laurent, In-Depth Analysis on Radiation Induced Multi-Level Dark Current Random Telegraph Signal in Silicon Solid State Image Sensors. 2017, IEEE Transactions on Nuclear Science. 64 (1). 19-26. ISSN 0018-9499

In-Depth Analysis on Radiation Induced Multi-Level Dark Current Random Telegraph Signal in Silicon Solid State Image Sensors

Raine Mélanie, Jay Antoine, Richard Nicolas, Goiffon Vincent, Girard Sylvain, Gaillardin Marc, Paillet Philippe, Simulation of Single Particle Displacement Damage in Silicon – Part I : Global Approach and Primary Interaction Simulation. 2017, IEEE Transactions on Nuclear Science. 64 (1). 133-140. ISSN 0018-9499

Simulation of Single Particle Displacement Damage in Silicon – Part I: Global Approach and Primary Interaction Simulation

Jay Antoine, Raine Mélanie, Richard Nicolas, Mousseau Normand, Goiffon Vincent, Hémeryck Anne, Magnan Pierre, Simulation of Single Particle Displacement Damage in Silicon – Part II : Generation and Long-Time Relaxation of Damage Structure. 2017, IEEE Transactions on Nuclear Science. 64 (1). 141-148. ISSN 0018-9499

Simulation of Single Particle Displacement Damage in Silicon – Part II: Generation and Long-Time Relaxation of Damage Structure

Goiffon Vincent, Rolando Sébastien, Corbière Franck, Rizzolo Serena, Chabane Aziouz, Girard Sylvain, Baer Jérémy, Estribeau Magali, Magnan Pierre, Paillet Philippe, Van Uffelen Marco, Mont-Casellas Laura, Scott Robin, Gaillardin Marc, Marcandella Claude, Marcelot Olivier, Allanche Timothé, Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments. 2017, IEEE Transactions on Nuclear Science. 64 (1). 45-53. ISSN 0018-9499

Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments

Marcelot Olivier, Goiffon Vincent, Rizzolo Serena, Pace Federico, Magnan Pierre, Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations. 2017, IEEE Transactions on Electron Devices. 64 (12). 4985-4991. ISSN 0018-9383

Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations

Rizzolo Serena, Goiffon Vincent, Sergent Marius, Corbière Franck, Rolando Sébastien, Chabane Aziouz, Paillet Philippe, Marcandella Claude, Girard Sylvain, Magnan Pierre, Van Uffelen Marco, Mont-Casellas Laura, Scott Robin, De Cock Wouter, Multi-MGy total ionizing dose induced MOSFET variability effects on radiation hardened CMOS image sensor performances. 2017, Radiations Effects on Components and Systems (RADECS), 2017-10-02 - 2017-10-06 (2017-10-06, Geneva)

Multi-MGy total ionizing dose induced MOSFET variability effects on radiation hardened CMOS image sensor performances

Allanche Timothé, Goiffon Vincent, Rizzolo Serena, Paillet Philippe, Chabane Aziouz, Duhamel Olivier, Muller Cyprien, Magnan Pierre, Clerc Raphael, Marin Emmanuel, Boukenter Aziz, Ouerdane Youcef, Girard Sylvain, Analysis of X-Ray Photo-Charge Induced Speckles in a Radiation Hardened CMOS Image Sensor. 2017, Radiation and Its Effects on Components and Systems (RADECS 2017), 2017-10-02 - 2017-10-06 (2017-10-06, Genève)

Analysis of X-Ray Photo-Charge Induced Speckles in a Radiation Hardened CMOS Image Sensor

Raine Mélanie, Jay Antoine, Richard Nicolas, Goiffon Vincent, Girard Sylvain, Gaillardin Marc, Paillet Philippe, Simulation of Single Particle Displacement Damage in Silicon – Part I : Global Approach and Primary Interaction Simulation. 2017, Nuclear and Space Radiation Effects Conference (NSREC), 2016-07-11 - 2016-07-15 (2016-07-15, Portland)

Simulation of Single Particle Displacement Damage in Silicon – Part I: Global Approach and Primary Interaction Simulation

Durnez Clémentine, Goiffon Vincent, Rizzolo Serena, Magnan Pierre, Virmontois Cédric, Rubaldo Laurent, Localization of Dark Current Random Telegraph Signal sources in pinned photodiode CMOS Image Sensors : 2017 International Conference on Noise and Fluctuations (ICNF). 2017, 2017 International Conference on Noise and Fluctuations (ICNF), 2017-06-20 - 2017-06-23 (2017-06-23, Vilnius)

Localization of Dark Current Random Telegraph Signal sources in pinned photodiode CMOS Image Sensors : 2017 International Conference on Noise and Fluc

Girard Sylvain, Goiffon Vincent, Paillet Philippe, Van Uffelen Marco, Mont-Casellas Laura, Corbière Franck, Rolando Sébastien, Rizzolo Serena, Magnan Pierre, Duhamel Olivier, Marcandella Claude, Gaillardin Marc, Allanche Timothé, Muller Cyprien, Lépine Thierry, Boukenter Aziz, Ouerdane Youcef, Scott Robin, De Cock Wouter, FURHIS project : Development of MGy Radiation‐Hardened Imaging System for ITER remote handling operations. 2017, International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA 2017), 2017-06-19 - 2017-06-23 (2017-06-23, Lièges)

FURHIS project: Development of MGy Radiation‐Hardened Imaging System for ITER remote handling operations

Goiffon Vincent, Rizzolo Serena, Corbière Franck, Rolando Sébastien, Chabane Aziouz, Sergent Marius, Paillet Philippe, Girard Sylvain, Estribeau Magali, Magnan Pierre, Van Uffelen Marco, Mont-Casellas Laura, Gaillardin Marc, Scott Robin, De Cock Wouter, Challenges in Improving the Performances of Radiation Hard CMOS Image Sensors for Gigarad (Grad) Total Ionizing Dose. 2017, 2017 International Image Sensor Workshop (IISW), 2017-05-30 - 2017-06-02 (2017-06-02, Hiroshima)

Challenges in Improving the Performances of Radiation Hard CMOS Image Sensors for Gigarad (Grad) Total Ionizing Dose

Le Roch Alexandre, Goiffon Vincent, Durnez Clémentine, Magnan Pierre, Virmontois Cédric, Pistre L., Belloir Jean-Marc, Radiation-Induced Defects in a Commercial Image Sensor for Space Applications. 2017, CNES Workshop : CMOS Image Sensors for High Performance Applications, 2017-11-21 - 2017-11-22 (2017-11-22, Toulouse)

Radiation-Induced Defects in a Commercial Image Sensor for Space Applications

Le Roch Alexandre, Goiffon Vincent, Durnez Clémentine, Magnan Pierre, Virmontois Cédric, Pistre L., Belloir Jean-Marc, Radiation Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Application. 2017, RADECS 2017 : Radiation and Its Effects on Components and Systems, 2017-10-02 - 2017-10-06 (2017-10-06, Geneva)

Radiation Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Application

Pelamatti Alice, Goiffon Vincent, Chabane Aziouz, Magnan Pierre, Virmontois Cédric, Saint-Pé Olivier, Bréart-de-Boisanger Michel, Charge Transfer Inefficiency in Pinned Photodiode CMOS image sensors : Simple Montecarlo modeling and experimental measurement based on a pulsed storage-gate method. 2016, Solid-State Electronics. 125. 227-233. ISSN 0038-1101

Charge Transfer Inefficiency in Pinned Photodiode CMOS image sensors: Simple Montecarlo modeling and experimental measurement based on a pulsed storag

Belloir Jean-Marc, Goiffon Vincent, Virmontois Cédric, Paillet Philippe, Raine Mélanie, Magnan Pierre, Gilard Olivier, Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors. 2016, IEEE Transactions on Nuclear Science. 63 (4). 2183-2192. ISSN 0018-9499

Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors

Pelamatti Alice, Goiffon Vincent, De Ipanema Moreira Alexis, Magnan Pierre, Virmontois Cédric, Saint-Pé Olivier, Bréart-de-Boisanger Michel, Comparison of Pinning Voltage Estimation Methods in Pinned Photodiode CMOS Image Sensors. 2016, IEEE Journal of the Electron Devices Society. 4 (2). 99-108. ISSN 2168-6734

Comparison of Pinning Voltage Estimation Methods in Pinned Photodiode CMOS Image Sensors

Belloir Jean-Marc, Goiffon Vincent, Virmontois Cédric, Raine Mélanie, Paillet Philippe, Duhamel Olivier, Gaillardin Marc, Magnan Pierre, Gilard Olivier, Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors. 2016, Optics Express. 24 (4). 4299-4315. ISSN 1094-4087

Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors

Belloir Jean-Marc, Goiffon Vincent, Magnan Pierre, Virmontois Cédric, Gilard Olivier, Raine Mélanie, Paillet Philippe, Dark Current Spectroscopy in neutron, proton and ion irradiated CMOS Image Sensors. 2016, IEEE Nuclear and Space Radiation Effects Conference (NSREC 2016), 2016-07-11 - 2016-07-15 (2016-07-15, Portland)

Dark Current Spectroscopy in neutron, proton and ion irradiated CMOS Image Sensors

Goiffon Vincent, CMOS Image Sensors in Harsh Radiation Environments. 2016

CMOS Image Sensors in Harsh Radiation Environments

Rizzolo Serena, Goiffon Vincent, Corbière Franck, Rolando Sébastien, Chabane Aziouz, Baer Jérémy, Estribeau Magali, Magnan Pierre, Marcelot Olivier, Girard Sylvain, Allanche Timothé, Paillet Philippe, Gaillardin Marc, Marcandella Claude, Van Uffelen Marco, Mont-Casellas Laura, Scott Robin, Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Grad Total Ionizing Dose Environments. 2016, Radiation Effects on Optoelectronic Detectors (CNES Workshop), 2016-09-16

Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Grad Total Ionizing Dose Environments

Marcelot Olivier, Goiffon Vincent, Raine Mélanie, Duhamel Olivier, Gaillardin Marc, Molina Romain, Magnan Pierre, Radiation Effects in CCD on CMOS Devices : First Analysis of TID and DDD Effects. 2015, IEEE Transactions on Electron Devices. 62 (6). 2965-2970. ISSN 0018-9383

Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects

Goiffon Vincent, Corbière Franck, Rolando Sébastien, Estribeau Magali, Magnan Pierre, Avon Barbara, Baer Jérémy, Gaillardin Marc, Molina Romain, Paillet Philippe, Girard Sylvain, Chabane Aziouz, Cervantes Paola, Marcandella Claude, Multi-MGy Radiation Hard CMOS Image Sensor : Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests. 2015, IEEE Transactions on Nuclear Science. 62 (6). 2956-2964. ISSN 0018-9499

Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

Gaillardin Marc, Martinez Martial, Girard Sylvain, Goiffon Vincent, Paillet Philippe, Leray Jean-Luc, Magnan Pierre, Ouerdane Youcef, Boukenter Aziz, Marcandella Claude, Duhamel Olivier, Raine Mélanie, Richard Nicolas, Andrieu François, Barraud Sylvain, Faynot Olivier, High Total Ionizing Dose and Temperature Effects on Micro- and Nano-Electronic Devices. 2015, IEEE Transactions on Nuclear Science. 62 (3). 1226-1232. ISSN 0018-9499

High Total Ionizing Dose and Temperature Effects on Micro- and Nano-Electronic Devices

Pelamatti Alice, Belloir Jean-Marc, Messien Camille, Goiffon Vincent, Estribeau Magali, Magnan Pierre, Virmontois Cédric, Saint-Pé Olivier, Philippe Paillet, Temperature dependence and dynamic behaviour of full well capacity in pinned photodiode CMOS image sensors. 2015, IEEE Transactions on Electron Devices. 62 (4). 1200-1207. ISSN 0018-9383

Temperature dependence and dynamic behaviour of full well capacity in pinned photodiode CMOS image sensors

Gaillardin Marc, Goiffon Vincent, Paillet Philippe, Raine Mélanie, Girard Sylvain, Leray Jean-Luc, Magnan Pierre, Ouerdane Youcef, Boukenter Aziz, Martinez Martial, Marcandella Claude, Duhamel Olivier, Richard Nicolas, Investigations of MGy ionizing dose effects induced in thin oxides of micro-electronic devices. 2015, Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA2015), 2015-04-20 - 2015-04-24 (2015-04-24, Lisbon)

Investigations of MGy ionizing dose effects induced in thin oxides of micro-electronic devices

Goiffon Vincent, Corbière Franck, Rolando Sébastien, Estribeau Magali, Avon Barbara, Magnan Pierre, Baer Jérémy, Molina Romain, Chabane Aziouz, Cervantes Paola, Gaillardin Marc, Paillet Philippe, Marcandella Claude, Girard Sylvain, Multi-MGy Radiation Hardened CMOS Image Sensor : Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests. 2015, Proceedings of Nuclear and Space Radiation Effects Conference (NSREC), 2015-07-13 - 2015-07-17 (2015-07-17, Boston)

Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

Pelamatti Alice, Goiffon Vincent, Chabane Aziouz, Magnan Pierre, Virmontois Cédric, Saint-Pé Olivier, Bréart-de-Boisanger Michel, Speed Analysis in Pinned Photodiode CMOS Image Sensors based on a Pulsed Storage-Gate Method. 2015, Proceedings of European Solid-State Device conference (ESSDERC), 2015-09-15 - 2015-09-17 (2015-09-17, Gratz)

Speed Analysis in Pinned Photodiode CMOS Image Sensors based on a Pulsed Storage-Gate Method

Belloir Jean-Marc, Goiffon Vincent, Magnan Pierre, Virmontois Cédric, Gilard Olivier, Raine Mélanie, Paillet Philippe, Duhamel Olivier, Gaillardin Marc, Pixel Pitch and Particle Energy Influence on the Dark Current Distribution of Neutron Irradiated CMOS Image Sensors. 2015, IEEE Nuclear & Space Radiation Effects Conference (NSREC 2015), 2015-07-13 - 2015-07-17 (2015-07-17, Boston)

Pixel Pitch and Particle Energy Influence on the Dark Current Distribution of Neutron Irradiated CMOS Image Sensors

Belloir Jean-Marc, Goiffon Vincent, Magnan Pierre, Virmontois Cédric, Gilard Olivier, Raine Mélanie, Paillet Philippe, Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors. 2015, 15th European Conference RADECS 2015, 2015-09-14 - 2015-09-18 (2015-09-18, Moscou)

Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors

Goiffon Vincent, Corbière Franck, Rolando Sébastien, Estribeau Magali, Magnan Pierre, Avon Barbara, Baer Jérémy, Gaillardin Marc, Paillet Philippe, Girard Sylvain, Molina Romain, Chabane Aziouz, Cervantes Paola, Marcandella Claude, Toward Multi-MGy / Grad Radiation Hardened CMOS Image sensors for Nuclear Applications. 2015, International Image Sensor Workshop (IISW 2015), 2015-06-08 - 2015-06-11 (2015-06-11, Vaals)

Toward Multi-MGy / Grad Radiation Hardened CMOS Image sensors for Nuclear Applications

Belloir Jean-Marc, Goiffon Vincent, Pelamatti Alice, Lincelles Jean-Baptiste, Virmontois Cédric, Magnan Pierre, Gilard Olivier, Raine Mélanie, Paillet Philippe, Dark Current Blooming in Pinned Photodiode CMOS Image Sensors. 2015, CMOS Image sensors for high performance applications, 2015-11-18 - 2015-11-19 (2015-11-19, Toulouse)

Dark Current Blooming in Pinned Photodiode CMOS Image Sensors

Gaillardin Marc, Goiffon Vincent, TID Effects in CMOS and SOI - HBD vs HBT – application to MGy Hardening of a CMOS Imager. 2015, Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA2015), 2015-04-20 - 2015-04-24 (2015-04-24, Lisbon)

TID Effects in CMOS and SOI - HBD vs HBT – application to MGy Hardening of a CMOS Imager

Girard Sylvain, Goiffon Vincent, Paillet Philippe, Lépine Thierry, Corbière Franck, Rolando Sébastien, Boukenter Aziz, Alanche Timothé, Duhamel Olivier, Molina Romain, Estribeau Magali, Avon Barbara, Baer Jérémy, Gaillardin Marc, Raine Mélanie, Magnan Pierre, Ouerdane Youcef, Multi-MGy Radiation Hardened Camera for Nuclear Facilities. 2015, Proceedings of Advancements in Nuclear Instrumentation Measurement Methods and their Applications, 2015-04-20 - 2015-04-24 (2015-04-24, Lisbon)

Multi-MGy Radiation Hardened Camera for Nuclear Facilities

Goiffon Vincent, Radiation Effects on CMOS Active Pixel Image Sensors : Ionizing Radiation Effects in Electronics : From Memories to Imagers. 2015« In :» Ionizing Radiation Effects in Electronics : From Memories to Imagers. 978-1-4987-2260-5

Radiation Effects on CMOS Active Pixel Image Sensors : Ionizing Radiation Effects in Electronics: From Memories to Imagers

Raine Mélanie, Goiffon Vincent, Paillet Philippe, Duhamel Olivier, Girard Sylvain, Gaillardin Marc, Virmontois Cédric, Belloir Jean-Marc, Richard Nicolas, Magnan Pierre, Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon. 2014, IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2014-07-14 - 2014-07-18 (2014-07-18, Paris)

Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon

Belloir Jean-Marc, Goiffon Vincent, Magnan Pierre, Virmontois Cédric, Gilard Olivier, Raine Mélanie, Paillet Philippe, Validation of a model for Dark Current Non Uniformity generated by Displacement Damage Dose in irradiated CMOS Image Sensors. 2014, Workshop CNES : Radiation Effects on Optoelectronic Devices, 2014-11-27

Validation of a model for Dark Current Non Uniformity generated by Displacement Damage Dose in irradiated CMOS Image Sensors

Goiffon Vincent, Estribeau Magali, Cervantes Paola, Molina Romain, Gaillardin Marc, Magnan Pierre, Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors. 2014, Proceedings of Nuclear and Space Radiation Effects Conference (NSREC) 2014, 2014-07-14 - 2014-07-18 (2014-07-18, Paris)

Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors

Goiffon Vincent, Estribeau Magali, Michelot Julien, Cervantes Paola, Pelamatti Alice, Marcelot Olivier, Magnan Pierre, Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors. 2014, IEEE Journal of the Electron Devices Society. 2 (4). 65-76. ISSN 2168-6734

Pixel Level Characterization of Pinned Photodiode and Transfer Gate Physical Parameters in CMOS Image Sensors

Marcelot Olivier, Estribeau Magali, Goiffon Vincent, Martin-Gonthier Philippe, Corbière Franck, Molina Romain, Rolando Sébastien, Magnan Pierre, Study of CCD Transport on CMOS Imaging Technology : Comparison Between SCCD and BCCD, and Ramp Effect on the CTI. 2014, IEEE Transactions on Electron Devices. 61 (3). 844-849. ISSN 0018-9383

Study of CCD Transport on CMOS Imaging Technology: Comparison Between SCCD and BCCD, and Ramp Effect on the CTI

Raine Mélanie, Goiffon Vincent, Paillet Philippe, Duhamel Olivier, Girard Sylvain, Gaillardin Marc, Virmontois Cédric, Belloir Jean-Marc, Richard Nicolas, Magnan Pierre, Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon. 2014, IEEE Transactions on Nuclear Science. ISSN 0018-9499

Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon

Goiffon Vincent, Estribeau Magali, Cervantes Paola, Molina Romain, Gaillardin Marc, Magnan Pierre, Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors. 2014, IEEE Transactions on Nuclear Science. 61 (6). 3290-3301. ISSN 0018-9499

Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors

Virmontois Cédric, Toulemont Arthur, Rolland Guy, Materne Alex, Lalucaa Valerian, Goiffon Vincent, Codreanu Catalin, Durnez Clémentine, Bardoux Alain, Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors. 2014, IEEE Transactions on Nuclear Science. 61 (6). 3331-3340. ISSN 0018-9499

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Rousseau Adrien, Darbon Stéphane, Paillet Philippe, Girard Sylvain, Bourgade Jean-Luc, Raine Mélanie, Duhamel Olivier, Goiffon Vincent, Magnan Pierre, Chabane Aziouz, Cervantes Paola, Hamel Matthieu, Larour Jean, Nuclear background effects on plasma diagnostics for megajoule class laser facility : Target Diagnostics Physics and Engineering for Inertial Confinement Fusion II. 2013, SPIE Optics+Photonics, 2013-08-25 - 2013-08-29 (2013-08-29, San Diego, California)

Nuclear background effects on plasma diagnostics for megajoule class laser facility : Target Diagnostics Physics and Engineering for Inertial Confinem

Goiffon Vincent, Michelot Julien, Magnan Pierre, Estribeau Magali, Marcelot Olivier, Cervantes Paola, Pelamatti Alice, Martin-Gonthier Philippe, On The Pixel Level Estimation of Pinning Voltage, Pinned Photodiode Capacitance and Transfer Gate Channel Potential. 2013, International Image Sensor Workshop (IISW 2013), 2013-06-12 - 2013-06-16 (2013-06-16, Snowbird Resort, Utah)

On The Pixel Level Estimation of Pinning Voltage, Pinned Photodiode Capacitance and Transfer Gate Channel Potential

Lalucaa Valerian, Goiffon Vincent, Magnan Pierre, Virmontois Cédric, Rolland Guy, Petit Sophie, Single Event Effects in 4T Pinned Photodiode Image Sensors. 2013, 50th IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2013-07-08 - 2013-07-12 (2013-07-12, San Francisco)

Single Event Effects in 4T Pinned Photodiode Image Sensors

Lalucaa Valerian, Goiffon Vincent, Magnan Pierre, Rolland Guy, Petit Sophie, Single Event Effects in 4T and 5T Pinned Photodiode CMOS Image Sensors. 2013, 3rd Workshop on CMOS Image Sensors for High Performance Applications, 2013-11-26 - 2013-11-27 (2013-11-27, Toulouse)

Single Event Effects in 4T and 5T Pinned Photodiode CMOS Image Sensors

Lalucaa Valerian, Goiffon Vincent, Magnan Pierre, Virmontois Cédric, Rolland Guy, Petit Sophie, Single Event Effects in 4T Pinned Photodiode Image Sensors. 2013, IEEE Transactions on Nuclear Science. 60 (6). 4314 -4322. ISSN 0018-9499

Single Event Effects in 4T Pinned Photodiode Image Sensors

Virmontois Cédric, Goiffon Vincent, Robbins Mark S., Tauziède Laurie, Geoffray Hervé, Raine Mélanie, Girard Sylvain, Gilard Olivier, Magnan Pierre, Bardoux Alain, Dark Current Random Telegraph Signals in Solid-State Image Sensors. 2013, IEEE Transactions on Nuclear Science. 60 (6). 4323-4331. ISSN 0018-9499

Dark Current Random Telegraph Signals in Solid-State Image Sensors

Gaillardin Marc, Girard Sylvain, Paillet Philippe, Leray Jean-Luc, Goiffon Vincent, Magnan Pierre, Marcandella Claude, Martinez Martial, Raine Mélanie, Duhamel Olivier, Richard Nicolas, Andrieu François, Barraud Sylvain, Faynot Olivier, Investigations on the vulnerability of advanced CMOS technologies to MGy dose environments. 2013, IEEE Transactions on Nuclear Science. 60 (4). 2590-2597. ISSN 0018-9499

Investigations on the vulnerability of advanced CMOS technologies to MGy dose environments

Raine Mélanie, Goiffon Vincent, Girard Sylvain, Rousseau Adrien, Gaillardin Marc, Paillet Philippe, Duhamel Olivier, Virmontois Cédric, Modeling Approach for the Prediction of Transient and Permanent Degradations of Image Sensors in Complex Radiation Environments. 2013, IEEE Transactions on Nuclear Science. 60 (6). 4297-4304. ISSN 0018-9499

Modeling Approach for the Prediction of Transient and Permanent Degradations of Image Sensors in Complex Radiation Environments

Gaillardin Marc, Goiffon Vincent, Marcandella Claude, Girard Sylvain, Martinez Martial, Paillet Philippe, Magnan Pierre, Estribeau Magali, Radiation Effects in CMOS Isolation Oxides : Differences and Similarities With Thermal Oxides. 2013, IEEE Transactions on Nuclear Science. 60 (4). 2623-2629. ISSN 0018-9499

Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides

Pelamatti Alice, Goiffon Vincent, Estribeau Magali, Cervantes Paola, Magnan Pierre, Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors. 2013, IEEE Electron Device Letters. 34 (7). 900-902. ISSN 0741-3106

Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

Lalucaa Valerian, Goiffon Vincent, Magnan Pierre, Rolland Guy, Petit Sophie, Single Event Effects in CMOS Image Sensors. 2013, IEEE Transactions on Nuclear Science. 60 (4). 2494-2502. ISSN 0018-9499

Single Event Effects in CMOS Image Sensors

Girard Sylvain, Mescia Luciano, Vivona Marilena, Laurent Arnaud, Ouerdane Youcef, Marcandella Claude, Prudenzano Francesco, Boukenter Aziz, Robin Thierry, Paillet Philippe, Goiffon Vincent, Gaillardin Marc, Cadier Benoît, Pinsard Emmanuel, Cannas Marco, Boscaino Roberto, Design of Radiation-Hardened Rare-Earth Doped Amplifiers Through a Coupled Experiment/Simulation Approach. 2013, Journal of Lightwave Technology (JLT). 31 (8). 1247-1254. ISSN 0733-8724

Design of Radiation-Hardened Rare-Earth Doped Amplifiers Through a Coupled Experiment/Simulation Approach

Gaillardin Marc, Goiffon Vincent, Magnan Pierre, High total ionizing dose and temperature effects on micro- and nano-electronic devices : 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications (ANIMMA). 2013, Proceedings of Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA), 2013 3rd International Conference on. 1-6

High total ionizing dose and temperature effects on micro- and nano-electronic devices : 2013 3rd International Conference on Advancements in Nuclear

Paillet Philippe, Goiffon Vincent, Chabane Aziouz, Girard Sylvain, Rousseau Adrien, Darbon Stéphane, Duhamel Olivier, Raine Mélanie, Cervantes Paola, Gaillardin Marc, Bourgade Jean-Luc, Magnan Pierre, Glebov Vladimir Yu, Pien Gregory, Hardening approach to use CMOS image sensors for fusion by inertial confinement diagnostics. 2013, IEEE Transactions on Nuclear Science. 60 (6). 4349-4355. ISSN 0018-9499

Hardening approach to use CMOS image sensors for fusion by inertial confinement diagnostics